Summary
一种通过精确控制温度、压力、流量和汽化装置来执行原子层薄膜沉积的设备。
Process Performance & Productivity
- Wafer Type: 12" (300mm)
- Cassette Type: Foup
- Flat Zone: 500mm
- Process: High-k ALD (单膜、复合膜、多组分遗传膜沉积)
- Process Material: N2, O3, ZrO2, HfO2, H2O2, TMA
- Process Temperature: 200 ~ 350 °C
- Variable Pitch: 6.6 ~ 10mm
- Moving System: WTR, FTR, FIMS, Loadport
- Option: Dry Pump, Plasma, O3 Generator, Scrubber
