Summary
Equipment that performs atomic layer thin film deposition with precise control of temperature, pressure, flow rate, and vaporization device
Process Performance & Productivity
- Wafer Type: 12" (300mm)
- Cassette Type: Foup
- Flat Zone: 500mm
- Process: High-k ALD (Deposition of single film, composite film, and multi-component dielectric film)
- Process Material: N2, O3, ZrO2, HfO2, H2O2, TMA
- Process Temperature: 200 ~ 350 °C
- Variable Pitch: 6.6 ~ 10mm
- Moving System: WTR, FTR, FIMS, Loadport
- Option: Dry Pump, Plasma, O3 Generator, Scrubber
