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Semiconductor

HPA
(High Pressure Anneal)

Equipment that passivates the Silicon Dangling Bonds at the insulating film-channel interface using high-pressure D2 anneal, controlling leakage as transistors continue to scale down

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HPA (High Pressure Anneal)
Specifications

Product Specifications

Wafer Type
300mm
Cassette Type
Foup
Flat Zone
>1000mm
Process
H2 & D2 Anneal
Process Temperature
200℃ ~ 900℃
Process Pressure
Max 30bar
Dual Option
75-wafer & 125-wafer Dual Option (improved productivity)
Fast Cooling
Zone-specific Fast Cooling Unit applied — shorter cooling time and minimized temperature difference between zones
Gas Flow
No gas flow during the Anneal Step (reduced material cost)
Maintenance
Bottom-side maintenance structure eliminates the need for work-at-height operations
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